10th International symposium on Negative Ions, Beams and Sources - NIBS'26

Improvements to Plasma and Process Uniformity in a Plasma Immersion Ion Implantation (PIII) System via Multi-cusp Magnetic Confinement

Sep 22, 2026, 5:00 PM

2h

Hume Hotel

Poster Poster Session 2

Speaker

William Davis (Dept. of Physics & Engineering Physics, University of Saskatchewan)

Description

Plasma Immersion Ion Implantation (PIII) is a high-fluence ion implantation technique well-suited for implanting large area and non-planar metallic and semiconducting targets [1-4]. The PIII system developed in the Bradley lab at the University of Saskatchewan (USask) is an ICP system in a bell-jar configuration [5] optimized for semiconductor and photonic device processing. One key advantage of PIII is its suitability for large-area targets- this is particularly relevant for semiconductor applications where large wafer size is important for high throughput. Therefore, ion implantation dose uniformity across a large target diameter is a key process parameter. Plasma uniformity in a large-diameter plasma chamber or ion source can be improved by multi-cusp magnetic confinement [6-8], as can the ion density for a given power, which is also important for high throughput in many applications. Motivated by this, recent improvements to the Bradley lab PIII Chamber include the addition of a multi-cusp magnetic confinement system. This poster will report on the technical aspects of this confinement, and consequent improvements to the plasma and process uniformity.

[1] M.P. Bradley, P.R. Desautels, D. Hunter, M. Risch, “Silicon electroluminescent device production via plasma ion implantation”, physica status solidi c, 6, S206-S209 (2009)
[2] M. Rishm M. Bradley, “Predicted depth profiles for nitrogen‐ion implantation into gallium arsenide” physica status solidi c 5 (4), 939-942 (2009).
[3] S. Qin, M.P. Bradley, P.L. Kellerman, K. Saadatmand, “Measurement and analysis of deposition-etch characteristics of plasma immersion ion implantation”, Review of Scientific Instruments 73 (2), 840-842 (2002).
[4] S.K. Purdy, A.P. Knights, M.P. Bradley, G.S. Chang, “Light-Emitting Diodes Fabricated From Carbon Ions Implanted Into p-Type Silicon”, IEEE Transactions on Electron Devices 62 (3), 914-918 (2015).
[5] J. Moreno, M. Jimenez, D. Okerstrom, M.P. Bradley, L. Couëdel, “Diagnostics of a Multicusp-Assisted Inductively-Coupled Radio-Frequency Plasma Source for Plasma Immersion Ion Implantation”, Open Plasma Science Vol. 2, No. 1 (2026).
[6] A. George, S. Melanson, D. Potkins, M. Dehnel, N. Broderick, H. McDonald, C. Philpott “Optimisation of D- Ion Production in a Production in a Multicusp Source”, Proceedings of IPAC2018 (2018).
[7] S.K. Hahto, S.T. Hahto, Q. Ji, K.N. Leung, S. Wilde, E.L. Foley, L.R. Grisham, F.M. Levinton, “Multicusp ion source with external rf antenna for production of protons”, Rev. Sci. Instrum. 75, 355–359 (2004)
[8] Yoshio Ueda, et al, “Effect of Substrate Potential on Plasma Parameters of Magnetic Multicusp Plasma Source”, Jpn. J. Appl. Phys. 37 3508 (1998).