Speaker
Description
Langmuir probes are a well-established and commonly used method for the characterization of plasmas. Basic Langmuir probe measurements focus on electron and positive ion currents while ignoring the possibility of negative ions; however, with certain assumptions, the analysis of the resultant curves can extend to negative ions. Microwave plasmas are important tools for thin film deposition with applications in semiconductor device fabrication and processing, diamond thin film deposition, and many other areas. The quality of films deposited depends on the plasma conditions and so the prospect of negative ion formation, although frequently ignored, should be considered. This poster will present early results and modelling of the possibility of negative ion formation and characterization via Langmuir Probe analysis in 2.45 GHz microwave plasmas operating in regimes suitable for thin film deposition and plasma processing.
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